Wolfspeed

Wolfspeed E-Series AEC-Q101 Silicon Carbide Diodes are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets.

Wolfspeed C3M0032120K Silicon Carbide Power MOSFETs are designed using C3M™ MOSFET Technology.

Wolfspeed CGD12HBXMP Dual Channel Differential Isolated Gate Driver evaluates the two-channel gate driver for the XM3 SiC half-bridge power modules.

Wolfspeed CGD12HB00D Differential Transceiver Companion Tool evaluates the two-channel gate driver for the XM3 SiC half bridge power modules.

Wolfspeed CAB450M12XM3 1200V 450A All-Silicon Carbide Half-Bridge Module maximizes power density while minimizing loop inductance and enabling simple power bussing.

Wolfspeed C3M0016120K Silicon Carbide Power MOSFET facilitates C3M™ MOSFET Technology in an optimized package.

Wolfspeed 6th Generation 650V C6D SiC Schottky Diodes demonstrate technological innovation and achieve highest system level efficiency in a PFC boost converter.

Wolfspeed / Cree CMPA5259050F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for radar power amplifiers.

Wolfspeed / Cree CMPA0527005F-AMP Demonstration Amplifier Circuit offers a test board with the CMPA0527005F GaN MMICs in a 6-leaded flange package installed.

Wolfspeed / Cree CMPA2735075F1-AMP Demonstration Amplifier Circuit offers a test board with the CMPA2735075F GaN MMICs in a 0.5" square screw-down package installed.

Wolfspeed / Cree KIT-CRD-3DD12P Buck-Boost Evaluation Kit is designed to demonstrate the high-speed switching performance of Cree’s 3rd Generation (C3M™) SiC MOSFETs in the TO-247-4L package.

Wolfspeed / Cree CMPA5259025F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for radar power amplifiers.

Wolfspeed / Cree CMPA0527005F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for power amplifiers.

Wolfspeed / Cree CMPA5259025F-AMP Demonstration Amplifier Circuit offers a test board with the CMPA5259025F GaN MMICs in a ceramic/metal flange package installed.

Wolfspeed / Cree CMPA5259050F-AMP Demonstration Amplifier Circuit offers a test board with the CMPA5259050F GaN MMICs in a ceramic/metal flange package installed.

Wolfspeed / Cree GTVA High Power RF GaN on SiC HEMT are 50V High Electron Mobility Transistors (HEMT) based on Gallium-Nitride on Silicon Carbide technology.

Wolfspeed / Cree C5D 1700V Z-Rec SiC Schottky Diodes are optimized for high voltage, high power environments.

Wolfspeed E-Series AEC-Q101 Silicon Carbide MOSFETs are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets.

Wolfspeed/Cree CGD15SG00D2 Gate Driver Board is designed to evaluate the 3rd generation (C3M) of SiC MOSFETs.

Wolfspeed/Cree KIT8020-CRD-5FF0917P-2 Evaluation Board is designed to demonstrate the switching performance of C3M0075120K SiC MOSFET in a TO-247-4 package.